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ISO 14706:2000
M00001940
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ISO 14706:2000 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
standard by International Organization for Standardization, 12/15/2000
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This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to:
elements of atomic number from 16 (S) to 92 (U);contamination elements with atomic surface densities from 1 1010 atoms/cm2 to 1 1014 atoms/cm2;contamination elements with atomic surface densities from 5 108 atoms/cm2 to 5 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).